DocumentCode
2085853
Title
Coupling between InAs quantum dots and strained InGaAs/GaAs coupled quantum-wells: a novel type of quantum dots
Author
Mu, Xiaodong ; Ding, Yujie J. ; Wang, Zhiming ; Salamo, Gregory J. ; Little, John
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2004
fDate
21-21 May 2004
Firstpage
552
Lastpage
554
Abstract
We have studied coupling between InGaAs/GaAs coupled quantum wells and self-assembled InAs quantum dots by measuring the linewidths, peak energies and peak intensities of photoluminescence peaks for different pump powers and lateral locations
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; photoluminescence; self-assembly; semiconductor quantum dots; semiconductor quantum wells; spectral line breadth; InAs; InGaAs-GaAs; linewidths; peak energies; peak intensities; photoluminescence; pump powers; self-assembled InAs quantum dots; strained InGaAs-GaAs coupled quantum-wells;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-778-4
Type
conf
Filename
1366887
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