Title :
Red shift of the excited state due to a non-degenerate biexciton in self-organized quantum dots
Author :
Kim, K. ; Singh, J. ; Bhattacharya, P. ; Norris, T.B. ; Hohenester, U.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
Abstract :
When the n=1 (ground) state of quantum dots is resonantly pumped, a "non-degenerate" biexciton composed of an n=1 and n=2 (excited) states-pair may be observed with pump-probe spectroscopy. We observed this resonance and measured 15-meV binding energy in In0.4Ga 0.6As self-organized quantum dots, consistent with theoretical calculations
Keywords :
III-V semiconductors; biexcitons; binding energy; excited states; gallium arsenide; indium compounds; infrared spectra; red shift; resonance; self-assembly; semiconductor quantum dots; 15 meV; In0.4Ga0.6As; binding energy; excited state; nondegenerate biexciton; pump-probe spectroscopy; red shift; resonance; self-organized quantum dots;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
