Title :
Numerical simulation of cool MOS transistor
Author :
Langer, Malgorzata ; Lisik, Zbigniew ; Podgorski, Jacek
Author_Institution :
Inst. of Electron., Tech. Univ. of Lodz, Poland
Abstract :
Although the new CoolMOS concept for high-voltage MOSFET is based on the conventional MOSFET principle, it is not a gradual enhancement or further optimization of the conventional power MOSFET, but a ground-breaking innovation in the MOS-controlled power transistor technology field. Due to its low on-resistance accompanying the high blocking voltage, the previously known technology limits for the standard MOSFET have been far exceeded. This opens the way to new fields of application.
Keywords :
numerical analysis; power MOSFET; semiconductor device models; simulation; 2D simulations; CoolMOS concept; HV MOSFET; MOS-controlled power transistor; cool MOS transistor; high blocking voltage; high-voltage MOSFET; low on-resistance; numerical modelling; numerical simulation; power MOSFET; Doping; Electric resistance; Equations; MOSFET circuits; Numerical models; Numerical simulation; Power MOSFET; Power transistors; Technological innovation; Voltage;
Conference_Titel :
CAD Systems in Microelectronics, 2001. CADSM 2001. Proceedings of the 6th International Conference. The Experience of Designing and Application of
Conference_Location :
Lviv-Slavsko, Ukraine
Print_ISBN :
966-553-079-8
DOI :
10.1109/CADSM.2001.975849
