Title :
Application of TCAD software for numerical simulation of power semiconductor devices
Author :
Langer, Malgorzata ; Podgórski, Jacek
Author_Institution :
Inst. of Electron., Tech. Univ. Lodz, Poland
Abstract :
The author presents a review of simulation and modeling possibilities, both for semiconductor device structures and process technologies. ISE TCAD software is introduced to illustrate some examples.
Keywords :
graphical user interfaces; insulated gate bipolar transistors; power MOSFET; semiconductor device models; semiconductor process modelling; technology CAD (electronics); GENESISe graphical interface; IGBT; ISE TCAD software; TCAD software; VDMOS; numerical simulation; power semiconductor devices; review; semiconductor device modeling; semiconductor process modeling; Application software; Current distribution; Design automation; Doping profiles; Flowcharts; Insulated gate bipolar transistors; Mesh generation; Numerical simulation; Power semiconductor devices; Semiconductor devices;
Conference_Titel :
CAD Systems in Microelectronics, 2001. CADSM 2001. Proceedings of the 6th International Conference. The Experience of Designing and Application of
Conference_Location :
Lviv-Slavsko, Ukraine
Print_ISBN :
966-553-079-8
DOI :
10.1109/CADSM.2001.975850
