A novel trench-type LIGBT having superior electrical characteristics

Author

Goo Kang, Ey ; Hyun Moon, Seung ; Kim, Sangsig ; Young Sung, Man

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

2

fYear

2001

fDate

2001

Firstpage

811

Abstract

A new small sized lateral trench electrode insulated gate bipolar transistor (LTEIGBT) was proposed to improve the characteristics of conventional lateral IGBT (LIGBT) and lateral trench gate IGBT (LTIGBT). The entire electrode of LTEIGBT was replaced with a trench-type electrode. The LTEIGBT was designed so that the width of device is no more than 19 μm. The Latch-up current densities of LIGBT, LTIGBT and LTEIGBT were 120A/cm², 540A/cm², and 1230A/cm², respectively. The enhanced latch-up capability of the LTEIGBT was obtained through holes in the current directly reaching the cathode via the p⁺ cathode layer underneath the n⁺ cathode layer. The forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were no more than 60V and 100V, respectively. Because the the proposed device was constructed of trench-type electrodes, the electric field moved toward trench-oxide layer, and punch through breakdown of LTEIGBT occurs late

Keywords

bipolar transistor switches; cathodes; current density; electric breakdown; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; 100 V; 130 V; 19 micron; 60 V; device characteristics improvement; electric field; enhanced latch-up capability; forward blocking voltage; latch-up current densities; lateral trench electrode insulated gate bipolar transistor; n+ cathode layer; p+ cathode layer; punch through breakdown; trench-type electrode; Anodes; Cathodes; Current density; Electric variables; Electrodes; Insulated gate bipolar transistors; Power integrated circuits; Power transistors; Silicon on insulator technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 2001. IECON '01. The 27th Annual Conference of the IEEE

Conference_Location

Denver, CO

Print_ISBN

0-7803-7108-9

Type

conf

DOI

10.1109/IECON.2001.975861

Filename

975861