Title :
Highly Linear Low-Noise Amplifier Design Using an Out-of-Band Termination for WiMAX Applications
Author :
Wu, J.M. ; Liou, C.K. ; Yang, N.K. ; Tsao, D.Y. ; Li, S.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan
Abstract :
A 2.6 GHz highly linear low-noise amplifier (LNA) is designed and implemented in hybrid microwave integrated circuit (HMIC) using GaAs pseudomorphic high electron mobility transistors (pHEMTs) for WiMAX applications. The center frequency of WiMAX LNA is designed at 2.6 GHz for the U.S. multi-point microwave distribution system (MMDS) band of frequency range from 2.5 GHz to 2.69 GHz. The proposed design is based on the out-of-band termination. The crucial measured results of WiMAX LNA include that a noise figure (NF) is less than 2 dB, a power gain is greater than 8 dB, an input 1 dB compression point (IP1 dB) is equal to 0 dBm, and an input third-order intercept point (IIP3) is equal to 7.5 dBm. A supply voltage of 1.8 V and power consumption is 8 mW are used.
Keywords :
UHF amplifiers; WiMax; gallium arsenide; high electron mobility transistors; low noise amplifiers; microwave integrated circuits; GaAs; GaAs pseudomorphic high electron mobility transistor; WiMAX application; frequency 2.5 GHz to 2.69 GHz; hybrid microwave integrated circuit; linear low-noise amplifier design; multipoint microwave distribution system; out-of-band termination; pHEMT; power 8 mW; voltage 1.8 V; Application specific integrated circuits; Electron mobility; Frequency; Gallium arsenide; Hybrid integrated circuits; Low-noise amplifiers; Microwave integrated circuits; Noise measurement; PHEMTs; WiMAX;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3692-7
Electronic_ISBN :
978-1-4244-3693-4
DOI :
10.1109/WICOM.2009.5301543