DocumentCode
2086975
Title
A Resistive HEMT-Mixer with Very Low LO-Power Requirements and Low Intermodulation
Author
Zirath, Herbert ; Rorsman, Niklas
Author_Institution
Dept. of Applied Electron Physics, Chalmers University of Technology, Göteborg, Sweden
Volume
2
fYear
1991
fDate
9-12 Sept. 1991
Firstpage
1469
Lastpage
1474
Abstract
The channel resistance of a High Electron Mobility Transistor (HEMT) is used as a time variable resistor to accomplish frequency mixing. An X-band image rejected mixer was constructed and pseudomorphic HEMTs were fabricated in order to investigate the performance. Acceptable conversion is obtained at very low LO-power. The experimental ¿1 dB compression point referred to the output is found to be approximately 3 dB lower than the LO-power.
Keywords
Circuit simulation; Diodes; HEMTs; Low voltage; Mixers; Molecular beam epitaxial growth; Ohmic contacts; Radio frequency; Resistors; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1991. 21st European
Conference_Location
Stuttgart, Germany
Type
conf
DOI
10.1109/EUMA.1991.336552
Filename
4136492
Link To Document