Effect of Substrate Bias on Production and Transport of Etchant Ions in a Magnetic Neutral Loop Discharge Plasma

Production and transport of etchant ions in an RF (13.56 MHz) magnetic neutral loop (NL) discharge plasma in the presence and the absence of an ac (1.695 MHz) substrate bias were simulated using a Monte Carlo method. Under the bias, electrons accelerated near the NL were attracted to the substrate and produced more etchant ions near the substrate than in the absence of the bias. Effect of bias leading to enhancement of the ion inflow to the substrate was discussed.