Title :
Characterization of W-Band CW Tunnett Diode
Author :
Pobl, M. ; Freyer, J.
Abstract :
GaAs TUNNETT diodes grown by MBE are investigated at W-band frequencies. The diode structure, output power, conversion efficiency and noise behaviour are presented. The maximum cw rf output power is 1S mW with 2% efficiency at 93 GHz. At a frequency of 2S kHz off carrier the FM N/C ratio is ¿78 dBc/Hz. A minimum noise measure M of 19 dB is obtained at power levels of about 4 mW. For the application as a self-oscillating mixer the minimum detectable signal was measured to be as low as ¿140 dBm with a conversion gain of 20 dB at ¿20 dBm output power.
Keywords :
Diodes; Frequency measurement; Gallium arsenide; Mixers; Noise level; Noise measurement; Power generation; Power measurement; Signal detection; Signal to noise ratio;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336557
