Title :
Pseudomorphic AIGaAs/GaInAs Hetero-FET Structures for Low Noise and Power Applications
Author :
Narozny, P. ; Dämbkes, H. ; Dickmann, J. ; Wölk, C. ; Adam, D. ; Barbier, E. ; Pons, D.
Author_Institution :
Daimler-Benz AG, FAU, Wilhelm-Runge-Strasse 11, D-7900 Ulm, Germany
Abstract :
PM HFET based devices and circuits on GaAs substrates are developed for the low noise and for the power components of 20 GHz to 30 GHz communication links. Cut off frequencies in excess of 200 GHz, minimum noise figures below 1.4 dB at 30 GHz and below 0.9 dB at 18 GHz, output power densities of 0.6 W/mm with PAE of 44 % at 18 GHz, and 0.36 W/mm with PAE of 40 % at 30 GHz are achieved.
Keywords :
Circuit noise; Conducting materials; Doping; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Noise figure; Sheet materials;
Conference_Titel :
Microwave Conference, 1991. 21st European
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/EUMA.1991.336559
