Title :
Study of Blue InGaN/GaN Light-Emitting Diodes With n-AlGaN Layer as Space Layer and Without the P-AlGaN Electron Blocking Layer
Author :
Xuna Li ; Huiqing Sun ; Jinxin Cai ; Min Yang ; Huan Zheng ; Hao Sun ; Zhiyou Guo
Author_Institution :
Lab. of Nanophotonic Functional Mater. & Device, South China Normal Univ., Guangzhou, China
Abstract :
In this paper, we study the characteristics of blue InGaN light-emitting diodes (LEDs) with n-AlGaN electron blocking layer (EBL) and n-AlGaN space layer (SL). The output power, internal quantum efficiency (IQE), energy band diagrams, carrier concentrations, radiative recombination and spontaneous emission rate are investigated by advanced physical model of semiconductor device (APSYS). The simulation results indicate that the LED with n-AlGaN SL shows an improvement of output power and radiative recombination than that of the LED with n-AlGaN EBL. The efficiency droop has been alleviated due to the better carrier injection and the enhancement of the overlap for the electrons and holes wave-function.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium compounds; indium compounds; light emitting diodes; semiconductor device models; spontaneous emission; wave functions; wide band gap semiconductors; AlGaN; InGaN-GaN; blue InGaN-GaN light emitting diodes; carrier concentrations; carrier injection; efficiency droop; energy band diagrams; holes wave function; internal quantum efficiency; n-AlGaN electron blocking layer; n-AlGaN space layer; output power; radiative recombination; semiconductor device physical model; spontaneous emission rate; Charge carrier processes; Educational institutions; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Radiative recombination; efficiency droop; light-emitting diodes (LEDs); n-AlGaN space layer (SL); polarization electric field;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2366201
