Title :
Phase change memory parameters: Effects of atomic transformations
Author :
Karpov, I. ; Kau, D. ; Spadini, G. ; Karpov, V.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
We discuss key PCM device parameters and their variations. In particular, we show how effects of atomic transformations result in unique device behaviors such as delay time, temporal changes of parameters, under-threshold and others. Concepts of nucleation switching, atomic double well potential and disordered glass structure are introduced to explain experimental data collected.
Keywords :
phase change memories; PCM device parameters; atomic double well potential; atomic transformation; delay time; disordered glass structure; nucleation switching; phase change memory parameter; temporal changes of parameters; unique device behaviors; Amorphous materials; Amorphous semiconductors; Crystalline materials; Crystallization; Delay effects; Electrical resistance measurement; Electrodes; Phase change materials; Phase change memory; Threshold voltage; Chalcogenide; Ge2Sb2Te5- (GST); drift; ovonic unified memory (OUM); phase change memory (PCM); threshold switching;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2008. NVMTS 2008. 9th Annual
Conference_Location :
Pacific Grove, CA
Print_ISBN :
978-1-4244-3659-0
Electronic_ISBN :
978-1-4244-2411-5
DOI :
10.1109/NVMT.2008.4731187
