DocumentCode
2087670
Title
A 0.08–3GHz high gain UWB LNA with improved flatness
Author
Hua Chen ; Peng Gao ; Shuang He ; Bin Yuan
Author_Institution
Res. Inst. of Electron. Sci. & Technol., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2013
fDate
24-25 Oct. 2013
Firstpage
411
Lastpage
414
Abstract
An ultra-wide band (UWB) low noise amplifier (LNA) of bandwidth 0.08-3GHz, gain more than 28dB, flatness fluctuating in ± 1dB and noise-figure less than 2.3dB is designed and tested. This LNA utilizes the characteristic of reactance value changing with frequency, especially, adopts capacitance negative-feedback in source electrode to compensate the decrease of high frequency gain. Comparing with traditional inductance negative feedback between drain electrode and gate electrode, this adding capacitance feedback can improve gain-flatness obviously. Furthermore, a transmission line of λ/4 is used to achieve broadband match of input and output port, as a result, the voltage standing-wave ratio (VSWR) of input and output port don´t exceed 2. Simulated and measured results are in good agreement.
Keywords
UHF amplifiers; electrodes; feedback amplifiers; low noise amplifiers; microwave amplifiers; UWB LNA; VSWR; bandwidth 0.08 GHz to 3 GHz; capacitance negative-feedback; drain electrode; flatness fluctuation; gate electrode; improved flatness; inductance negative feedback; reactance value; source electrode; ultra-wide band low noise amplifier; voltage standing-wave ratio; Capacitance; Frequency measurement; Indexes; Logic gates; Negative feedback; Radar; Receivers; broadband matching; capacitance negative-feedback; low noise amplifier; ultra-wide band;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on
Conference_Location
Chengdu
Type
conf
DOI
10.1109/MMWCST.2013.6814538
Filename
6814538
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