DocumentCode
2087739
Title
Formulation of capacitance of rapid thermal annealed junction
Author
Javan, Hank ; Spurlin, John ; Desai, Raj
Author_Institution
Dept. of Electron. & Comput. Technol., North Carolina A&T State Univ., Greensboro, NC, USA
fYear
1994
fDate
10-13 Apr 1994
Firstpage
120
Lastpage
122
Abstract
This paper provides an analytical expression for charge distribution and electric field of a rapid thermally annealed junction device. A numerical method is used and simulated results are compared with the experimental values. Our results indicate that Rapid Thermal Annealed process is a valid and economical method to produce microwave devices
Keywords
annealing; capacitance; rapid thermal processing; semiconductor device models; solid-state microwave devices; capacitance; charge distribution; electric field; microwave devices; numerical method; rapid thermal annealed junction; Capacitance; Computational modeling; Equations; Finite difference methods; Java; Lagrangian functions; Microelectronics; Polynomials; Rapid thermal annealing; Rapid thermal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '94. Creative Technology Transfer - A Global Affair., Proceedings of the 1994 IEEE
Conference_Location
Miami, FL
Print_ISBN
0-7803-1797-1
Type
conf
DOI
10.1109/SECON.1994.324279
Filename
324279
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