Fast resistance switching of TiO2 and MSQ thin films for non-volatile memory applications (RRAM)

We present the fabrication method and the electrical performance of nanoscale crosspoint junctions for two different metal/ oxide/ metal configurations. 100 × 100 nm² small cells were fabricated by e-beam lithography and nanoimprint lithography (NIL), respectively. The electrical results show switching speeds of less than 10 ns for the SET and RESET operations, and resistance changes of several orders of magnitude. Additionally, the resistance state of TiO₂ thin films reveal a strong dependence on the switch signal and demonstrates a retention time of up to 10⁵ s at room temperature and 85°C. The tested materials and fabrication steps are in good accordance with current and future CMOS technology and provide a way to achieve low cost, high density non-volatile memory.