• DocumentCode
    2087924
  • Title

    Ultra-low-noise receivers for the 1 to 120 GHz frequency range

  • Author

    Pospieszalski, Marian W.

  • Author_Institution
    National Radio Astronomy Observatory, 2015 Ivy Road, Charlottesville, VA 22903 Tel: (804) 296-0350; Fax: (804) 296-0324; e-mail: mpospies@nrao.edu
  • fYear
    1993
  • fDate
    6-10 Sept. 1993
  • Firstpage
    73
  • Lastpage
    79
  • Abstract
    Recent developments in ultra-low-noise receiver technology for frequencies up to 120 GHz are discussed. The following main topics are covered: - a short review of competing low-noise devices, - noise and signal properties of heterostructure field-effect transistors (HFET´s) at cryogenic temperatures, - design and examples of the realization of wideband low-noise, cryogenically-coolable HFET amplifiers in the 1 to 120 GHz range, - examples of HFET receiver realizations and the factors limiting their performance, and - a comparison of competing ultra-low-noise receiver technologies (masers, SIS/HFET IF amplifier tandems) in the 1 to 120 GHz frequency range. Illustrative examples of the different receivers installed on U.S.-based antennas are presented, followed by a short discussion of possible future developments.
  • Keywords
    Broadband amplifiers; Cryogenics; Frequency; HEMTs; Low-noise amplifiers; MODFETs; Masers; Signal design; Temperature distribution; Ultra wideband technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1993. 23rd European
  • Conference_Location
    Madrid, Spain
  • Type

    conf

  • DOI
    10.1109/EUMA.1993.336794
  • Filename
    4136532