Title :
Pitch fragmentation induced odd/even effects in a 36 nm floating gate NAND technology
Author :
Beug, M.F. ; Parascandola, S. ; Hoehr, T. ; Müller, T. ; Reichelt, R. ; Müller-Meskamp, L. ; Geiser, P. ; Geppert, T. ; Bach, L. ; Bewersdorff-Sarlette, U. ; Kenny, O. ; Brandl, S. ; Marschner, T. ; Meyer, S. ; Riedel, S. ; Specht, M. ; Manger, D. ; Knöfl
Author_Institution :
Qimonda Dresden GmbH & Co. OHG, Dresden, Germany
Abstract :
Floating gate NAND flash memory arrays with 64 cells per string and high-k inter poly dielectric have been fabricated on a 36 nm ground rule using sub-lithographic patterning techniques (pitch fragmentation). The influence of pitch fragmentation inherent critical dimension variations on the electrical parameters of the memory cells such as string saturation current, initial threshold voltage, and program/erase performance has been investigated in detail.
Keywords :
NAND circuits; flash memories; 36 nm floating gate NAND technology; floating gate NAND flash memory arrays; initial threshold voltage; memory cells; pitch fragmentation; string saturation current; sub-lithographic patterning techniques; Character generation; Costs; High K dielectric materials; High-K gate dielectrics; Lithography; Nonvolatile memory; Plugs; Space technology; Stereolithography; Threshold voltage; Floating gate NAND Flash; double patterning; gate coupling ratio; high-k inter poly dielectric; pitch-fragmentation;
Conference_Titel :
Non-Volatile Memory Technology Symposium, 2008. NVMTS 2008. 9th Annual
Conference_Location :
Pacific Grove, CA
Print_ISBN :
978-1-4244-3659-0
Electronic_ISBN :
978-1-4244-2411-5
DOI :
10.1109/NVMT.2008.4731198
