Effects of gate recess depth on very high performance 0.1 mm GaAs MESFET´s

0.1 ¿m gate length conventional GaAs MESFET´s have been fabricated with a wide range of saturation currents. These devices show excellent DC and RF performance, with very little variation of device behavior with recess depth. The overall performance of these devices is competitive with the best MESFET´s demonstrated to date, with average transconductances of 578 mS/mm and average ft´s of 97 GHz. The invariance of device performance with gate recess depth demonstrates a strong advantage for GaAs MESFET´s in terms of both process latitude and device design.