DocumentCode :
2088260
Title :
Luminescent mechanisms of Si-rich SiOx analyzed by full-band time-resolved photoluminescence
Author :
Chung-Lun Wu ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2012
fDate :
7-10 Nov. 2012
Firstpage :
1
Lastpage :
3
Abstract :
Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.
Keywords :
effective mass; elemental semiconductors; energy gap; photoluminescence; semiconductor quantum dots; silicon; silicon compounds; time resolved spectra; Si-SiOx; bandgap energy; effective masses; finite potential well approximation; full-band time-resolved photoluminescence; luminescent property; quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
ISSN :
2162-108X
Print_ISBN :
978-1-4673-6274-0
Type :
conf
Filename :
6510581
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2088260
بازگشت