• DocumentCode
    2088260
  • Title

    Luminescent mechanisms of Si-rich SiOx analyzed by full-band time-resolved photoluminescence

  • Author

    Chung-Lun Wu ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2012
  • fDate
    7-10 Nov. 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Based on the finite potential well approximation and effective masses modification, the bandgap energy of Si-QD is derived as Eg(d)=1.12+5.83/d1.78 (eV). The luminescent mechanisms of SiOx have been differentiated by PL and TRPL measurements.
  • Keywords
    effective mass; elemental semiconductors; energy gap; photoluminescence; semiconductor quantum dots; silicon; silicon compounds; time resolved spectra; Si-SiOx; bandgap energy; effective masses; finite potential well approximation; full-band time-resolved photoluminescence; luminescent property; quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications and Photonics Conference (ACP), 2012 Asia
  • Conference_Location
    Guangzhou
  • ISSN
    2162-108X
  • Print_ISBN
    978-1-4673-6274-0
  • Type

    conf

  • Filename
    6510581