GHGs reduction using the catalytic gas decomposition system

Author

Kinoshita, Hideo ; Matsuzaki, Sakae

Author_Institution

Renesas Eastern Japan Semicond. Inc., Gunma

fYear

2005

fDate

13-15 Sept. 2005

Firstpage

3

Lastpage

6

Abstract

The GHG emission reduction activity for the semiconductor factory has been described. As a result of the C₂F₆ gas and SF₆ gas emission reduction countermeasures taken, the total GHG emissions could be reduced by 51% compared with 1995. The catalytic gas decomposition system was installed for SF₆ gas, which was emitted from tungsten etching chamber. The SF₆ gas decomposition ratio has been maintained at over 99.9% for one year. Regarding the degradation of the catalytic gas decomposition system (due to tungsten etching process by-products), analysis indicates that the dry trapping equipment introduction improved the maintenance interval by more than one year. As a result, a low running cost could be achieved

Keywords

air pollution control; carbon compounds; catalysis; decomposition; etching; industrial plants; integrated circuit manufacture; sulphur compounds; C₂F₆; GHG emission reduction; SF₆; catalytic gas decomposition system; dry trapping equipment; gas decomposition ratio; gas emission reduction countermeasures; greenhouse gas; maintenance interval; semiconductor factory; tungsten etching chamber; Cleaning; Costs; Degradation; Dry etching; Gases; Global warming; Production facilities; Protocols; Safety; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9143-8

Type

conf

DOI

10.1109/ISSM.2005.1513282

Filename

1513282