Title :
Bandgap engineering of InGaAsP/InP laser structure by argon plasma induced point defects
Author :
Kaleem, Mohammed ; Xin Zhang ; Jian-Jun He
Author_Institution :
Dept. of Opt. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Blue shift of the bandgap in InGaAsP/InP quantum well structure is demonstrated experimentally. The technique depends upon generation of point defects via plasma induced damage during deposition of sputtered SiO2 followed by rapid thermal annealing.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; point defects; quantum well lasers; rapid thermal annealing; silicon compounds; spectral line shift; sputter deposition; InGaAsP-InP; SiO2; argon plasma induced point defects; bandgap engineering; blue shift; laser structure; plasma induced damage; quantum well structure; rapid thermal annealing; sputtered deposition;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0
