Title :
All-optical triode based on cross gain modulation using InAs quantum dot semiconductor optical amplifiers
Author_Institution :
Sch. of Sci. & Eng., Dept. of Electr. & Electron. Eng., Kinki Univ., Higashi-Osaka, Japan
Abstract :
Semiconductor optical amplifiers (SOAs) having nano-sized quantum dot (QD) particles show attractive features such as the achievement of a steady temperature characteristic, low power consumption, and a high-speed response to the input signal. We designed active layer of 15 stacks of InAs QDs, AlGaAs/GaAs double heterostructure and fabricated QD-SOAs for optical triode that can be used with a 1.3 μm band. Our results demonstrate input, control and out put waveforms, and response time of two optical triodes. It is confirmed high speed response characteristics of the optical triode obtained respond to higher bit rate of 40 Gbps.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; low-power electronics; quantum dot lasers; semiconductor optical amplifiers; triodes; AlGaAs-GaAs; InAs; QD-SOA; active layer; all-optical triode; bit rate 40 Gbit/s; cross gain modulation; double heterostructure; low power consumption; nanosized quantum dot particles; quantum dot semiconductor optical amplifiers; steady temperature characteristic; wavelength 1.3 mum;
Conference_Titel :
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location :
Guangzhou
Print_ISBN :
978-1-4673-6274-0