Title :
Limitations of the displaced Maxwellian distribution for hot-electron transport in multi-valley semiconductors
Author :
Huang, Lin ; Cheng, Ming C. ; Wen, Ying
Author_Institution :
Dept. of Electr. Eng., New Orleans Univ., LA, USA
Abstract :
The multi-valley transport model using the displaced Maxwellian distribution (DMD) is applied to study hot-electron transport phenomena in a two-valley semiconductor in fast transient situations. It is shown that the DMD approach at high fields is inadequate. The velocity overshoot behavior given by this approach is less pronounced than the Monte Carlo results. Also, the DMD leads to relatively small mean energy and large average velocity at high fields
Keywords :
high field effects; hot carriers; many-valley semiconductors; semiconductor materials; displaced Maxwellian distribution; fast transient; high fields; hot-electron transport; multi-valley semiconductors; two-valley semiconductor; velocity overshoot; Electrons; Energy loss; Gallium arsenide; Hydrodynamics; Maxwell equations; Monte Carlo methods; Phonons; Scattering; Semiconductor device testing; Semiconductor devices;
Conference_Titel :
Southeastcon '94. Creative Technology Transfer - A Global Affair., Proceedings of the 1994 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
0-7803-1797-1
DOI :
10.1109/SECON.1994.324354
