Near field optical spectroscopy of GaN/AlN quantum dots

Author

Neogi, A. ; Morkoc, H. ; Tackeuchi, A. ; Kuroda, T. ; Ohtsu, M. ; Kawazoe, T.

Author_Institution

Dept. of Phys., North Texas Univ., Denton, TX

fYear

2004

fDate

21-21 May 2004

Firstpage

832

Lastpage

833

Abstract

GaN dots on AlN layers were grown on sapphire substrates by rf-nitrogen plasma molecular beam epitaxy. Size control of QDs by strain modification using various growth techniques is demonstrated to achieve emission energies ranging from 2.5 eV to 3.9 eV . In self-organized GaN QDs, the quantum confinement effect observed in the "classical" GaAs-based QD or QW, is offset by the large piezoelectric fields resulting in a red-shift of the ground state optical transition below the bulk bandgap by about 0.5-1.2 eV

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium compounds; molecular beam epitaxial growth; photoluminescence; piezoelectricity; red shift; self-assembly; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; time resolved spectra; wide band gap semiconductors; 2.5 to 3.9 eV; Al₂O₃; GaN-AlN; GaN/AlN quantum dots; bandgap; ground state optical transition; near field optical spectroscopy; piezoelectric fields; quantum confinement effect; red-shift; rf-nitrogen plasma molecular beam epitaxy; self-organization; strain modification;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference, 2004. (IQEC). International

Conference_Location

San Francisco, CA

Print_ISBN

1-55752-778-4

Type

conf

Filename

1367024