• DocumentCode
    2089807
  • Title

    Characterization of optical integrated neuron

  • Author

    Javan, Hank ; Spurlin, John

  • Author_Institution
    Dept. of Electron. & Comput. Technol., North Carolina A&T State Univ., Greensboro, NC, USA
  • fYear
    1994
  • fDate
    10-13 Apr 1994
  • Firstpage
    480
  • Lastpage
    484
  • Abstract
    This paper introduces an analytical expression for the output power of a recently developed GaAs MESFET integrated optical neuron. Our expression shows that output power depends on the threshold voltage and device parameters of driving MESFET. Analytical results are compared with experimental values of NASA scientists. Agreement is satisfactory
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated optoelectronics; neural chips; optical neural nets; GaAs; GaAs MESFET; device parameters; optical integrated neuron; output power; threshold voltage; Circuits; Equations; FETs; Gallium arsenide; Integrated optics; Light emitting diodes; MESFETs; Neurons; Power generation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Southeastcon '94. Creative Technology Transfer - A Global Affair., Proceedings of the 1994 IEEE
  • Conference_Location
    Miami, FL
  • Print_ISBN
    0-7803-1797-1
  • Type

    conf

  • DOI
    10.1109/SECON.1994.324362
  • Filename
    324362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2089807