Title :
Integrated metrology: the next generation in HVM
Author :
Kangas, Elaine ; Finkner, Lyle
Author_Institution :
Intel Corp., Rio Rancho, NM, USA
Abstract :
Recent generation 193 nm lithography tools offer unique challenges for Intel and the semiconductor industry. Technologies are pushing the high volume manufacturing capability of critical dimension metrology tools in measurement and speed. The runrate for the latest generation lithography tools exceeds all previous generations by a wide margin requiring a change in metrology. How we respond to these challenges has far reaching implications for both our ability to successfully run new technologies in high volume as well as our ability to remain competitive in the marketplace. This paper will examine the case for integrated metrology (IM) for lithography as a technology driver that moves the industry towards adoption of integrated metrology as the next generation solution for lithography productivity.
Keywords :
integrated circuit manufacture; integrated circuit measurement; manufacturing systems; productivity; ultraviolet lithography; 193 nm; Intel; critical dimension metrology tools; high volume manufacturing; integrated metrology; lithography productivity; lithography tools; semiconductor industry; Hardware; Lithography; Manufacturing; Metrology; Optical feedback; Optical films; Optical scattering; Productivity; Sampling methods; Time measurement;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513320
