Adhesion layerless submicron Al damascene interconnections using novel Al-CVD

Author

Shinzawa, T. ; Sugai, K. ; Kobayashi, A. ; Hayashi, Y. ; Nakajima, T. ; Kishida, S. ; Okabayashi, H. ; Yako, T. ; Tsunenari, K. ; Murao, Y.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Kanagawa, Japan

fYear

1994

fDate

7-9 June 1994

Firstpage

77

Lastpage

78

Abstract

Adhesion layerless submicron damascene interconnection has been realized by using a combination of novel Al-CVD and CMP technique. A new nucleation method with tetrakis-dimethyl-amino titanium (TDMAT) gas pretreatment has enabled Al-CVD to fill Al in trenches without using a glue layer. As a result, this technology achieved Al damascene interconnections with low specific line resistance as low as 600 /spl Omega//cm with half micron line width and an aspect ratio of 3. This specific line resistance is one-third of that for conventional reactive ion etched Al line with an aspect ratio of 1.<>

Keywords

VLSI; aluminium; chemical vapour deposition; integrated circuit technology; metallisation; nucleation; 0.5 micron; Al; CVD; adhesion layerless submicron interconnections; nucleation method; specific line resistance; submicron Al damascene interconnections; tetrakis-dimethyl-amino titanium gas pretreatment; Adhesives; Artificial intelligence; Filling; Laboratories; National electric code; Optical films; Substrates; Surface morphology; Temperature; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324369

Filename

324369