DocumentCode
2089988
Title
CD SEM calibration to TEM for accurate metrology of fins in MuGFET devices
Author
Lorusso, G.F. ; Collaert, N. ; Rooyackers, R. ; Ercken, M. ; Pollentier, I. ; Cheng, S. ; Degroote, B. ; Jurczak, M. ; Biesemans, S. ; Richard, O. ; Bender, H. ; Azordegan, A. ; Kuppa, R. ; Shirke, S. ; Prochazka, J. ; Long, T.
Author_Institution
IMEC, Leuven, Belgium
fYear
2005
fDate
13-15 Sept. 2005
Firstpage
169
Lastpage
172
Abstract
We describe a procedure to calibrate CD SEM to TEM for accuracy. This goal is achieved by using 4 CD reference standards in the range 10-70 nm. After calibration, the CD SEM demonstrated sensitivity to process variation down to 10 nm. The accuracy of the CD SEM measurements on fins of MuGFET devices was confirmed by TEM analysis.
Keywords
calibration; field effect transistors; nanoelectronics; scanning electron microscopy; semiconductor device manufacture; semiconductor device measurement; size measurement; transmission electron microscopy; 10 to 70 nm; MuGFET devices; SEM measurement; TEM analysis; critical dimension calibration; multigate field effect transistors; Calibration; Etching; Lattices; Metrology; NIST; Production; Scanning electron microscopy; Silicon; Standards development; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN
0-7803-9143-8
Type
conf
DOI
10.1109/ISSM.2005.1513326
Filename
1513326
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