DocumentCode
2090005
Title
Development of a CMP pad with controlled micro features for improved performance
Author
Lee, Sunghoon ; Kim, Hyoungjae ; Dornfeld, David
Author_Institution
Dept. of Mech. Eng., California Univ., Berkeley, CA, USA
fYear
2005
fDate
13-15 Sept. 2005
Firstpage
173
Lastpage
176
Abstract
This paper focuses on the development of a new chemical mechanical polishing (CMP) based on characterization of conventional pads. Based on new design rules, new pads are prototyped and tested with planarity in SiO2 CMP. The result is compared with the conventional pad and the effect of each pad design is also investigated according to design rules.
Keywords
chemical mechanical polishing; integrated circuit design; integrated circuit manufacture; prototypes; silicon compounds; CMP pad; SiO2; chemical mechanical polishing; pad design; pad prototyping; pad testing; Abrasives; Atherosclerosis; Chemical engineering; Fabrication; Mechanical engineering; Prototypes; Reservoirs; Shape control; Slurries; Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN
0-7803-9143-8
Type
conf
DOI
10.1109/ISSM.2005.1513327
Filename
1513327
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