DocumentCode :
2090005
Title :
Development of a CMP pad with controlled micro features for improved performance
Author :
Lee, Sunghoon ; Kim, Hyoungjae ; Dornfeld, David
Author_Institution :
Dept. of Mech. Eng., California Univ., Berkeley, CA, USA
fYear :
2005
fDate :
13-15 Sept. 2005
Firstpage :
173
Lastpage :
176
Abstract :
This paper focuses on the development of a new chemical mechanical polishing (CMP) based on characterization of conventional pads. Based on new design rules, new pads are prototyped and tested with planarity in SiO2 CMP. The result is compared with the conventional pad and the effect of each pad design is also investigated according to design rules.
Keywords :
chemical mechanical polishing; integrated circuit design; integrated circuit manufacture; prototypes; silicon compounds; CMP pad; SiO2; chemical mechanical polishing; pad design; pad prototyping; pad testing; Abrasives; Atherosclerosis; Chemical engineering; Fabrication; Mechanical engineering; Prototypes; Reservoirs; Shape control; Slurries; Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
Type :
conf
DOI :
10.1109/ISSM.2005.1513327
Filename :
1513327
Link To Document :
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