A high-linearity S-band SiGe HBT low-noise amplifier design

Author

Yang Zong-shuai ; Niehai ; Han Wen-tao

Author_Institution

Beijing Age Long Sci. & Technol. Ltd., Chengdu Univ. of Inf. Technol., Beijing, China

fYear

2013

fDate

24-25 Oct. 2013

Firstpage

308

Lastpage

311

Abstract

A 2.1~2.5GHz SiGe HBT low-noise amplifier (LNA) with highly linearity and low-noise is described. The LNA is designed with a novel resistor feedback bias circuit structure which be aimed to obtain excellent linearity performance. On-chip balun is used for single-to-differential conversion between the LNA and the down-conversion mixer. The simulated results show that the transmission gain is 11.9dB with less than 0.3dB variation in 60M frequency range, noise figure varies between 1.9 and 2.1dB, input reflection (S11) is less than -16.3dB and the Op_1dB is more than 16dBm over the entire band. Power dissipation is 60mWat 5V supply.

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC mixers; baluns; bipolar MIMIC; circuit feedback; low noise amplifiers; HBT low-noise amplifier design; LNA; SiGe; UHF amplifiers; down-conversion mixer; frequency 2.1 GHz to 2.5 GHz; gain 11.9 dB; linearity performance; noise figure 1.9 dB to 2.1 dB; on-chip balun; power 60 mW; resistor feedback bias circuit; voltage 5 V; Bluetooth; Heterojunction bipolar transistors; Impedance matching; Linearity; Nickel; Resistors; Wireless communication; SiGe HBT; high-linearity; low noise amplifiers; resistor feedback; s-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Circuits and System Technology (MMWCST), 2013 International Workshop on

Conference_Location

Chengdu

Type

conf

DOI

10.1109/MMWCST.2013.6814639

Filename

6814639