A 0.5 /spl mu/m technology for advanced microcontroller applications

Author

Sharma, U. ; Kuo-Tung Chang ; Woo, M. ; Ko-Min Chang ; Yeargain, J.R.

Author_Institution

Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA

fYear

1994

fDate

7-9 June 1994

Firstpage

67

Lastpage

68

Abstract

The paper describes a modular 0.5 /spl mu/m, n+/p+ poly, Ti-salicided, double poly, triple metal technology combining high performance digital logic, precision analog components and non-volatile memory. The non-volatile memory is a simple, split-gate flash EEPROM which consumes little power during program, erase and read operations. Because of the low power/low voltage operation of individual devices, the overall technology is ideally suited for applications in high speed communication, computing and battery powered portable systems.<>

Keywords

CMOS integrated circuits; EPROM; VLSI; integrated circuit technology; microcontrollers; mixed analogue-digital integrated circuits; 0.5 micron; VLSI; battery powered portable systems; double poly triple metal technology; high performance digital logic; high speed communication; low power/low voltage operation; microcontrollers; nonvolatile memory; precision analog components; split-gate flash EEPROM; Capacitors; Circuits; EPROM; Implants; Logic; Microcontrollers; Nonvolatile memory; Resistors; Split gate flash memory cells; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324374

Filename

324374