Ultra-low contact resistance metallization by a silicidation technology employing a silicon capping layer for protection against contamination

Author

Yamada, K. ; Tomita, K. ; Ohmi, T.

Author_Institution

Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan

fYear

1994

fDate

7-9 June 1994

Firstpage

63

Lastpage

64

Abstract

An ultra low contact resistance metallization process has been developed by employing Ta silicidation of Si contact surface by ion beam mixing through a tantalum film covered with a Si capping layer. The as-deposited Ta surface is protected in-situ by a very thin Si film in order to prevent the metal surface from being oxidized or contaminated during subsequent processing. As a result, completely native-oxide-free contact metallization has been established. By combining the oxide-free Si/metal-on-Si deposition and ultraclean ion implantation for ion mixing, an ultra low contact resistance of 3.3/spl times/10/sup -9/ (/spl Omega/ cm/sup 2/) has been achieved.<>

Keywords

VLSI; contact resistance; integrated circuit technology; ion implantation; metallisation; TaSi/sub 2/; ULSI; contamination protection; ion beam mixing; metallization; native-oxide-free contact; silicidation technology; silicon capping layer; ultra-low contact resistance; ultraclean ion implantation; Contact resistance; Ion beams; Metallization; Protection; Semiconductor films; Silicidation; Silicides; Silicon; Surface contamination; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324376

Filename

324376