DocumentCode
2090148
Title
A novel disposable post technology for self-aligned sub-micron contacts
Author
Cleeves, M. ; Ramkumar, K. ; Gettle, R.
Author_Institution
Cypress Semicond., San Jose, CA, USA
fYear
1994
fDate
7-9 June 1994
Firstpage
61
Lastpage
62
Abstract
A novel VLSI contact technology is proposed which uses disposable photoresist posts to define the contact regions. This technology which does not use any contact etch process completely removes the requirements for a high etch selectivity material in the contacts. It is ideally suited for forming self aligned contacts without damaging the underlying silicon or silicide.<>
Keywords
DRAM chips; SRAM chips; VLSI; integrated circuit technology; metallisation; photoresists; VLSI contact technology; contact regions; disposable post technology; photoresist posts; self-aligned sub-micron contacts; Chemical technology; Chemistry; Dielectrics; Etching; Random access memory; Resists; Semiconductor materials; Silicides; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324377
Filename
324377
Link To Document