Title :
A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications
Author :
Ma, Y. ; Pang, C.S. ; Pathak, J. ; Tsao, S.C. ; Chang, C.F. ; Yamauchi, Y. ; Yoshimi, M.
Author_Institution :
Bright Microelectronics Inc., Santa Clara, CA, USA
Abstract :
A high density 5 V-only flash memory array with sector erase mode is presented. It features a new triple poly split-gate source-side-injection cell in a contactless array to achieve small cell size, high programming efficiency, high cell current with no over-erase concerns. The array design and its operating conditions in various modes are discussed. Various disturb reduction techniques, array performance and speed improvement schemes are presented.<>
Keywords :
EPROM; MOS integrated circuits; VLSI; cellular arrays; integrated memory circuits; 5 V; cell current; cell size; disturb reduction techniques; high density contactless flash memory array; programming efficiency; sector erase mode; speed improvement; triple poly split-gate source-side-injection cell; Degradation; Delay; Flash memory; Implants; Laboratories; Microelectronics; Nonvolatile memory; Split gate flash memory cells; Very large scale integration; Voltage control;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324383
