DocumentCode :
2090311
Title :
Monolithic GaAs transimpedance amplifier with voltage tunable bandwidth and gain control
Author :
Hernandez-Munoz, Jose M ; Gonzalez, Jose
Author_Institution :
Microelectronics Division. TELEFONICA l+D. Emilio Vargas, 6. 28043 Madrid. SPAIN. Tel.: +34-1-337.4020; Fax: +34-1-337.4131
fYear :
1993
fDate :
6-10 Sept. 1993
Firstpage :
368
Lastpage :
371
Abstract :
A monolithic transimpedance amplifier for optical front-ends with voltage tunable bandwidth between 200 MHz and 2.4 GHz, and 40 dB gain control margin for AGC implementation, is described. The circuit consists of three main sections: preamplifier, controllable gain amplifier, and output buffer. Bandwidth adjust maintains near constant the G-BW product in the whole range, while gain control is independent, and does not modify the bandwidth setting. Both controls have been realized using MESFE1b as variable resistors. The circuit provides a gain of 80 dB¿ at 2.4 GHz bandwidth, input noise below 5 pA/¿Hz for bandwidth settings up to 700 MHz, and output VSWR lower than 1.5:1 over the whole band. The circuit has been designed and fabricated utilizing commercially available 0.5¿m gate length GaAs MESFET process.
Keywords :
Bandwidth; Gain control; Gallium arsenide; Optical amplifiers; Optical buffering; Optical variables control; Preamplifiers; Semiconductor optical amplifiers; Stimulated emission; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
Type :
conf
DOI :
10.1109/EUMA.1993.336895
Filename :
4136624
Link To Document :
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