Title :
Very broad band TWAs to 80 GHz on GaAs substrate
Author :
Braunstein, Jurgen ; Tasker, P.J. ; Hulsmann, A. ; Schlechtweg, M. ; Kohler, W.Reinert K. ; Bronner, W. ; Haydl, W.
Author_Institution :
Fraunhofer Institute for Applied Solid State Physics Tullastrasse 72, D-79108 Freiburg, Germany. Phone +49-761-51S9-534, Fax +49-761-5159-400, e-mail: braunstein@iaf.fhg.de
Abstract :
Traveling Wave Amplifiers were fabricated successfully with a gain of 9.3 dB + 0.6 dB in the frequency range from 5 GHz to 80 GHz measured on-wafer. The associated input and output matching are better than ¿10 dB up to 70 GHz. To our knowledge this is a new performance record, not only for GaAs based circuits but also for InP based MMICs. Each TWA stage comprises a cascode pair of transistors with 0.16 ¿m gate length. For the first time Cascode transistors in CPW-technology were used for a TWA achieving a gain bandwidth product of 744 GHz*dB.
Keywords :
Bandwidth; Capacitance; Circuits; Etching; Feedback; Frequency; Gain measurement; Gallium arsenide; Noise figure; Noise measurement;
Conference_Titel :
Microwave Conference, 1993. 23rd European
Conference_Location :
Madrid, Spain
DOI :
10.1109/EUMA.1993.336896
