DocumentCode
2090328
Title
A Receiver Circuit for Low-Swing Interconnect Schemes
Author
Moisiadis, Yiannis ; Tsiatouhas, Yiorgos
Author_Institution
Helic Inc., Athens, Greece
fYear
2010
fDate
5-7 July 2010
Firstpage
238
Lastpage
241
Abstract
This paper presents a new receiver circuit that is suitable for low-swing interconnect schemes in CMOS nanometer technologies. Compared to the conventional receiver, which utilizes a PMOS feedback transistor, the proposed configuration is based on an auxiliary cross-coupled structure, which provides significant reduction of the delay time and eliminates the short circuit current, during transitions. The new receiver outperforms the conventional one, especially when very low power supply voltages are used and large capacitive loads are driven. The proposed topology has been designed in a 90nm CMOS technology and the simulation results confirm that, with respect to the conventional receiver, the delay and energy savings may approach 87% and 60% respectively.
Keywords
CMOS integrated circuits; integrated circuit interconnections; nanoelectronics; radio receivers; CMOS nanometer technologies; CMOS technology; PMOS feedback transistor; auxiliary cross-coupled structure; conventional receiver; delay time; low power supply voltages; low-swing interconnect schemes; receiver circuit; short circuit current; size 90 nm; Delay; Driver circuits; Integrated circuit interconnections; Power supplies; Receivers; Transistors; Wires; component; low-power; low-swing interconnect; receiver circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2010 IEEE Computer Society Annual Symposium on
Conference_Location
Lixouri, Kefalonia
Print_ISBN
978-1-4244-7321-2
Type
conf
DOI
10.1109/ISVLSI.2010.41
Filename
5572778
Link To Document