DocumentCode
2090342
Title
Improvement in MOS reliability by oxidation in ozone
Author
Nakanishi, T. ; Sato, Y. ; Okuno, M. ; Takasaki, K.
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1994
fDate
7-9 June 1994
Firstpage
45
Lastpage
46
Abstract
Using clean ozone in a new load-locked oxidation system, we made thin gate oxides with improved charge to breakdown characteristics (Q/sub bd/) and low surface state sensitise (D/sub it/).<>
Keywords
electric breakdown of solids; insulated gate field effect transistors; oxidation; reliability; semiconductor technology; surface electron states; MOS reliability; charge to breakdown characteristics; clean ozone; load-locked system; oxidation; surface state sensitise; thin gate oxides; Area measurement; Atmosphere; Breakdown voltage; Channel bank filters; Degradation; Electron traps; Human computer interaction; Laboratories; Oxidation; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324385
Filename
324385
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