Device design of partial-SOI SJ-LDMOS with n type charge islands

In this paper, addressed SOI SJ-LDMOS high voltage devices, from the beginning of conventional SOI SJ-LDMOS structure, the charge balance effect, the lateral and vertical breakdown voltage theory, self-heating effect and the new device structure are researched. Based on the above aspects, a novel charge-mode SOI SJ-LDMOS high voltage device structure is proposed, and some simulation experiment results are obtained from the novel device. Compared with the 89.5V of conventional structure, the breakdown voltage of the new device structure increased to 212.5V, the value increased by 137.4%.