Title :
Low Power Single Electron Or/Nor Gate Operating at 10GHz
Author :
Tsiolakis, T. ; Alexiou, G. Ph ; Konofaos, N.
Author_Institution :
Dept. of Comput. Eng. & Inf., Univ. of Patras, Patras, Greece
Abstract :
The design and simulation of a single-electron OR/NOR gate is being presented using a Monte Carlo based tool. Both the OR/NOR behavior and the stability were verified while the free energy behavior of the circuit was also examined. The results confirmed that the circuit behaved as an OR/NOR gate, depicting improved characteristics than previously published single electron OR circuits, achieving a really fast operational speed at low power. Moreover, the noise through the circuit was nearly diminished, while a stable behavior of the circuit was verified without any noise present at the output points.
Keywords :
Monte Carlo methods; logic design; logic gates; low-power electronics; single electron devices; Monte Carlo based tool; free energy behavior; frequency 10 GHz; low power single electron OR/NOR gate; Circuit stability; Integrated circuit modeling; Logic gates; Monte Carlo methods; Noise; Stability analysis; Thermal stability; Circuit free energy; Coulomb blockade; Monte Carlo method; circuit stability; noise; single electron design and simulation; single electron gate; single electron transistor (SET); single electron tunneling; single electronics;
Conference_Titel :
VLSI (ISVLSI), 2010 IEEE Computer Society Annual Symposium on
Conference_Location :
Lixouri, Kefalonia
Print_ISBN :
978-1-4244-7321-2
DOI :
10.1109/ISVLSI.2010.78
