Low Power Single Electron Or/Nor Gate Operating at 10GHz

Author

Tsiolakis, T. ; Alexiou, G. Ph ; Konofaos, N.

Author_Institution

Dept. of Comput. Eng. & Inf., Univ. of Patras, Patras, Greece

fYear

2010

fDate

5-7 July 2010

Firstpage

273

Lastpage

276

Abstract

The design and simulation of a single-electron OR/NOR gate is being presented using a Monte Carlo based tool. Both the OR/NOR behavior and the stability were verified while the free energy behavior of the circuit was also examined. The results confirmed that the circuit behaved as an OR/NOR gate, depicting improved characteristics than previously published single electron OR circuits, achieving a really fast operational speed at low power. Moreover, the noise through the circuit was nearly diminished, while a stable behavior of the circuit was verified without any noise present at the output points.

Keywords

Monte Carlo methods; logic design; logic gates; low-power electronics; single electron devices; Monte Carlo based tool; free energy behavior; frequency 10 GHz; low power single electron OR/NOR gate; Circuit stability; Integrated circuit modeling; Logic gates; Monte Carlo methods; Noise; Stability analysis; Thermal stability; Circuit free energy; Coulomb blockade; Monte Carlo method; circuit stability; noise; single electron design and simulation; single electron gate; single electron transistor (SET); single electron tunneling; single electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI (ISVLSI), 2010 IEEE Computer Society Annual Symposium on

Conference_Location

Lixouri, Kefalonia

Print_ISBN

978-1-4244-7321-2

Type

conf

DOI

10.1109/ISVLSI.2010.78

Filename

5572785