DocumentCode :
2090602
Title :
Bias dependence of noise correlation in MAGFETs
Author :
Castaldo, Fernando C. ; Cajueiro, João Paulo C ; dos Reis, Carlos Alberto dos
fYear :
2003
fDate :
8-11 Sept. 2003
Firstpage :
187
Lastpage :
190
Abstract :
In this paper, measurement results of noise power spectral density in p-channel split-drain MAGFETs operating under various levels of bias current are presented and discussed. It has been observed that correlation increases for decreasing levels of bias current. For currents below 5 μA, noise correlation is higher than 50%, rising rapidly towards total correlation. These results indicate that this type of magnetic sensor can be used for low level detection, contradicting what has been so far mentioned in the literature. Measurements were made for bias current ranging from 2 μA to circa 70 μA using MAGFETs manufactured in 0.8 μm CMOS with geometric aspect ratios of 10 μm/10 μm, 24 μm/24 μm and 24 μm/30 μm.
Keywords :
MOSFET; magnetic sensors; semiconductor device measurement; semiconductor device noise; 0.8 micron; 10 micron; 2 to 70 muA; 24 micron; 30 micron; CMOS; MAGFET; bias current level; low level magnetic flux detection; magnetic sensor; noise correlation bias dependence; noise power spectral density; p-channel split-drain MAGFET; sensor geometric aspect ratio; smart magnetic flux density sensors; Current measurement; MOSFETs; Magnetic flux density; Magnetic materials; Magnetic noise; Magnetic sensors; Noise level; Performance analysis; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits and Systems Design, 2003. SBCCI 2003. Proceedings. 16th Symposium on
Print_ISBN :
0-7695-2009-X
Type :
conf
DOI :
10.1109/SBCCI.2003.1232827
Filename :
1232827
Link To Document :
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