Title :
High performance atmospheric plasma abatement system for PFC reduction
Author :
Mangyou, Hirotaka ; Watanabe, Nobuaki ; Hattori, Kenji ; Watanabe, Tadaharu ; Sugimori, Yoshiaki ; Shibuya, Kazunobu ; Hasaka, Satoshi
Author_Institution :
Taiyo-Nippon Saonso Corp., Kanagawa, Japan
Abstract :
Newly developed atmospheric plasma abatement system is suitable to an abatement for single tool of oxide etcher and plasma enhanced CVD for chamber cleaning. Optimized performance of microwave plasma cavity enables to treat up to 80 L/min of CF4 exhaust with 95% of DRE at the maximum power of 5.9 kW. This system is applicable to the flow rate range of 40 L/min to 80 L/min. We believe that our proposed plasma abatement system meets semiconductor industry requirements of minimizing COO for PFC reduction.
Keywords :
air pollution control; etching; exhaust systems; global warming; integrated circuit manufacture; plasma CVD; surface cleaning; CF4; PFC reduction; atmospheric plasma abatement system; chamber cleaning; exhaust system; microwave plasma cavity; oxide etcher; plasma enhanced CVD; semiconductor industry; Cleaning; Combustion; Costs; Electromagnetic heating; Electronics industry; Etching; Gases; High power microwave generation; Plasma applications; Plasma waves;
Conference_Titel :
Semiconductor Manufacturing, 2005. ISSM 2005, IEEE International Symposium on
Print_ISBN :
0-7803-9143-8
DOI :
10.1109/ISSM.2005.1513352
