Novel deep sub-quarter micron PMOSFETs with ultra-shallow junctions utilizing boron diffusion from poly-Si/oxide(BDSOX)

Author

Togo, M. ; Mogami, T. ; Uwasawa, K. ; Kunio, T.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan

fYear

1994

fDate

7-9 June 1994

Firstpage

21

Lastpage

22

Abstract

A new ultra-shallow junction fabrication process, utilizing boron diffusion from poly-silicon/oxide(BDSOX) structure, has been developed for deep sub-quarter micron PMOSFETs. Ultra-shallow (<30-40 nm) and high concentration (>5/spl times/10/sup 1/9 cm/sup 3/) junctions have been realized. Short channel effects were significantly suppressed and good electrical characteristics were obtained for deep sub-quarter micron PMOSEETs by utilizing the BDSOX process. This new process is compatible with the conventional CMOS process.<>

Keywords

CMOS integrated circuits; boron; circuit reliability; diffusion in solids; hot carriers; insulated gate field effect transistors; integrated circuit technology; semiconductor doping; 30 to 40 nm; B diffusion; BDSOX process; CMOS process; PMOSFETs; Si:B-SiO/sub 2/; deep sub-quarter micron devices; electrical characteristics; p-channel devices; poly-Si/oxide; short channel effects suppression; ultra-shallow junctions; Boron; CMOS process; CMOS technology; Electric variables; Fabrication; Hot carriers; MOSFET circuits; Resists; Solid state circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-1921-4

Type

conf

DOI

10.1109/VLSIT.1994.324397

Filename

324397