Title :
Novel deep sub-quarter micron PMOSFETs with ultra-shallow junctions utilizing boron diffusion from poly-Si/oxide(BDSOX)
Author :
Togo, M. ; Mogami, T. ; Uwasawa, K. ; Kunio, T.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Kanagawa, Japan
Abstract :
A new ultra-shallow junction fabrication process, utilizing boron diffusion from poly-silicon/oxide(BDSOX) structure, has been developed for deep sub-quarter micron PMOSFETs. Ultra-shallow (<30-40 nm) and high concentration (>5/spl times/10/sup 1/9 cm/sup 3/) junctions have been realized. Short channel effects were significantly suppressed and good electrical characteristics were obtained for deep sub-quarter micron PMOSEETs by utilizing the BDSOX process. This new process is compatible with the conventional CMOS process.<>
Keywords :
CMOS integrated circuits; boron; circuit reliability; diffusion in solids; hot carriers; insulated gate field effect transistors; integrated circuit technology; semiconductor doping; 30 to 40 nm; B diffusion; BDSOX process; CMOS process; PMOSFETs; Si:B-SiO/sub 2/; deep sub-quarter micron devices; electrical characteristics; p-channel devices; poly-Si/oxide; short channel effects suppression; ultra-shallow junctions; Boron; CMOS process; CMOS technology; Electric variables; Fabrication; Hot carriers; MOSFET circuits; Resists; Solid state circuits; Threshold voltage;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324397
