DocumentCode :
2090659
Title :
Channel and source/drain engineering in high-performance sub-0.1 /spl mu/m NMOSFETs using X-ray lithography
Author :
Hang Hu ; Su, L.T. ; Yang, I.Y. ; Antoniadis, D.A. ; Smith, H.I.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fYear :
1994
fDate :
7-9 June 1994
Firstpage :
17
Lastpage :
18
Abstract :
Channel lengths are continually scaled to smaller dimensions to improve performance and packing density. In recent years this has led to demonstrations of MOSFETs with effective channel length of 0.1 /spl mu/m and below. The key technology challenges at these linewidths include the lithography to reproducibly achieve fine dimensions, source and drain engineering to reduce device parasitics, and channel engineering to control short-channel effects. In this work, we demonstrate a high-performance NMOS technology that utilizes X-ray lithography to achieve channel lengths below 0.1 /spl mu/m; a novel cobalt salicidation (CoSi/sub 2/) technique using a titanium/cobalt laminate to achieve very low parasitic source/drain resistance; and shallow junctions and an optimized super-steep retrograde (SSR) channel profile to achieve very high transconductance devices with excellent control of short-channel effects.<>
Keywords :
MOS integrated circuits; X-ray lithography; cobalt compounds; insulated gate field effect transistors; integrated circuit technology; metallisation; 0.1 micron; Co salicidation technique; CoSi/sub 2/; Ti-Co; Ti/Co laminate; X-ray lithography; channel length; high-performance NMOS technology; shallow junctions; short-channel effects; sub-0.1 /spl mu/m NMOSFET; super-steep retrograde channel profile; Cobalt; Etching; Implants; Indium; Laminates; MOS devices; MOSFETs; Resists; Titanium; X-ray lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
Type :
conf
DOI :
10.1109/VLSIT.1994.324399
Filename :
324399
Link To Document :
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