DocumentCode
2090672
Title
Influence of electrical conditions on silicon pulse shaping and modelocking
Author
Shiming Gao ; Lizhong Cao ; Bing Sun ; Sichang Jiang ; Kai Hu ; Yizhen Wei
Author_Institution
Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou, China
fYear
2012
fDate
7-10 Nov. 2012
Firstpage
1
Lastpage
3
Abstract
The silicon pulse shaping and modelocking laser is characterized by varying the input electrical conditions. A narrower output pulse can be obtained by increasing modulation depth, reducing duty cycle, and increasing driving current of amplifier.
Keywords
laser mode locking; optical modulation; optical pulse shaping; silicon; amplifier driving current; duty cycle; electrical conditions; laser mode locking; modulation depth; silicon pulse shaping;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications and Photonics Conference (ACP), 2012 Asia
Conference_Location
Guangzhou
ISSN
2162-108X
Print_ISBN
978-1-4673-6274-0
Type
conf
Filename
6510678
Link To Document