Title :
A novel NAND structure with a BJT contact for the high density mask ROMs
Author :
Choi, J.D. ; Lee, W.K. ; Cho, S.H. ; Kang, N.S. ; Suh, K.D. ; Lim, H.K.
Author_Institution :
Memory Device Bus., Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
A novel NAND cell structure with a PNP BJT, which amplifies the cell current, was proposed and fabricated. Its typical current gain is around 10 and the measured cell current is about 180 /spl mu/A at 25/spl deg/C. This amount is extremely high compared to that of the conventional NAND cell structure. This structure also keeps good current driving capability regardless of temperature variation while full MOS type degrades the characteristics. This results indicate that this new structure is a strong candidate for high performance and high density mask ROMs.<>
Keywords :
BiCMOS integrated circuits; integrated memory circuits; logic gates; read-only storage; 180 muA; BJT contact; NAND cell structure; PNP BJT; current driving capability; high density mask ROMs; Boron; Capacitance; Degradation; Electronic switching systems; Equivalent circuits; Leakage current; Ocean temperature; Read only memory; Writing;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324406
