Title :
Pulsed terahertz emission from indium nitride thin films
Author :
Ascazubi, R. ; Wilke, I. ; Denniston, K. ; Lu, H. ; Schaff, W.J.
Author_Institution :
Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY
Abstract :
We report for the first time femtosecond optically excited terahertz pulse emission from indium nitride (InN). MBE-grown InN is a novel electronic material. The THz emission from InN is strong compared to previously investigated semiconductors
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; optical films; semiconductor thin films; wide band gap semiconductors; InN; MBE; indium nitride films; pulsed terahertz emission;
Conference_Titel :
Quantum Electronics Conference, 2004. (IQEC). International
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-778-4
