Title :
On-chip decoupling capacitor optimization for noise and leakage reduction
Author :
Chen, Howard H. ; Neely, J. Scott ; Wang, Micheal F. ; Co, Gricell
Author_Institution :
IBM Corp., Yorktown Heights, NY, USA
Abstract :
On-chip decoupling capacitors are widely used in today´s high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology, however, also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network, and the optimization of the placement of thin-oxide and thick-oxide capacitors to reduce the tunneling current, leakage power, and burn-in cost, while limiting the power supply noise within a noise margin.
Keywords :
capacitors; circuit optimisation; circuit simulation; integrated circuit design; integrated circuit modelling; integrated circuit noise; leakage currents; logic design; microprocessor chips; nanoelectronics; decoupling capacitor placement optimization; leakage reduction; microprocessors; nanotechnology; noise margin; noise reduction; on-chip decoupling capacitors; oxide thickness reduction; power supply distribution network; power supply noise; thin-oxide capacitor leakage power; tunneling current; Cost function; Microprocessors; Nanotechnology; Noise figure; Noise reduction; Packaging; Power capacitors; Power supplies; Semiconductor device noise; Tunneling;
Conference_Titel :
Integrated Circuits and Systems Design, 2003. SBCCI 2003. Proceedings. 16th Symposium on
Print_ISBN :
0-7695-2009-X
DOI :
10.1109/SBCCI.2003.1232837