Title :
A very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 /spl mu/m high-density BiCMOS SRAM technology
Author :
Taft, R.C. ; Lin, J.-H. ; Shapiro, F. ; Bockelman, D. ; Camilleri, N.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
This paper presented the bipolar RF and circuit characterization of a high-performance 0.35 /spl mu/m BICMOS technology specifically designed for fast SRAMs. A 900 MHz noise figure as low as 0.54 dB at 0.5 mA, prescaler operation up to 3.3 GHz for a switch current of 200 pA, and unstacked CML operation down to 1.0 V yielding a 4.8 fJ power-delay product were reported.<>
Keywords :
BiCMOS integrated circuits; SRAM chips; bipolar transistors; emitter-coupled logic; semiconductor device noise; 0.35 micron; 0.5 mA; 0.54 dB; 900 MHz; SRAM technology; circuit characterization; current mode logic; fast static RAMs; high-density BiCMOS; high-performance bipolar device; low RF noise; prescaler operation; unstacked CML operation; BiCMOS integrated circuits; Bismuth; CMOS technology; Circuit topology; Logic devices; Noise figure; Noise shaping; Radio frequency; Random access memory; Voltage;
Conference_Titel :
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-1921-4
DOI :
10.1109/VLSIT.1994.324407
