DocumentCode
2091025
Title
Influence of high substrate doping concentration on the hot-carrier and other characteristics of small-geometry CMOS transistors down to the 0.1 /spl mu/m generation
Author
Ono, M. ; Saito, M. ; Yoshitomi, T. ; Fiegna, C. ; Ohguro, T. ; Momose, H.S. ; Iwai, H.
Author_Institution
ULSI Lab., Toshiba Corp., Kawasaki, Japan
fYear
1994
fDate
7-9 June 1994
Firstpage
147
Lastpage
148
Abstract
The influence of high substrate doping on the characteristics of small-geometry n- and p-MOSFETs down to 0.1 /spl mu/m has been investigated in detail. A practical limiting impurity concentration is found to exist at around 2/spl sim/5/spl times/10/sup 18/ cm/sup -3/ depending upon the application. In addition, unusual behaviors are found in the hot carrier characteristics in the region of high doping concentration.<>
Keywords
doping profiles; hot carriers; insulated gate field effect transistors; semiconductor device testing; 0.1 micron; MOSFET scaling; doping concentration; hot-carrier characteristics; limiting impurity concentration; small-geometry CMOS transistors; substrate doping concentration; Character generation; Doping; Electric breakdown; Hot carriers; Impurities; Laboratories; MOSFET circuits; Research and development; Tunneling; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1994. Digest of Technical Papers. 1994 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-1921-4
Type
conf
DOI
10.1109/VLSIT.1994.324414
Filename
324414
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